An insulated-gate bipolar transistor (IGBT) is a three-terminal power semiconductor device primarily used as an electronic switch which, as it was developed, came to combine high efficiency and fast switching.
IGBT is a functional integration of Power MOSFET and BJT devices in monolithic form.
IGBT combines the best attributes of both to achieve optimal device characteristics. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode.
All componentsand interconnects are isolated from the heat sinking baseplate,offering simplified system assembly.